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N. P. NETESOVA, M. V. Lomonosov Moscow State University, Physics Faculty, 119992, Moscow, Sparrow Hills, Russia.
Problem: to not use the classical Kramers-Kronig integral transformation and to define all optical electron oscillation parameters for any energy point from semiconducting nanostructure experimental reflection spectra\footnote N.~P.~ Netesova, NGS12 Proceedings , Editors: J.~Kono, Jean Leotin, Toulouse, France,\textbf 2, 178-183, (3-7 July 2005). Within the untied oscillation model the calculation technique of all semiconducting heterostructure optical parameters by the intermediate functions (\hbar
, \hbar
n, \hbar
) are the plasma, effective natural, radiant friction energies in eV, 2
\hbar is the Planck constant) is presented. As an example the optical parameters of PbS, PbSe, PbTe and GaAs, GaP between 0 and 25 eV in any spectrum region are established. The consistent approximation approach of the reflectance factor R to real value is advanced. As a result, all heterostructure basic electron optical functions (\hbar
p, \hbar
pm, \hbar
c, \hbar
are the plasma, plasma maximum, effective natural, radiant friction energies,
r,
, nr, n
are the real and imaginary components of the dielectric
and refractive index n functions, accordingly, (
r)max, (
r) min, (\hbar
)·
is conductivity, (\hbar
)· n
=(c
\hbar/2)·
, where c is the light velocity,
is absorption coefficient, L=Im (-1/
) are electron lossis, equal imaginary component of the minus reciprocal dielectric function
, \hbar
· L=(\hbar
)· Im (-1/
) are effective electron lossis) calculated by the intermediate functions in any electron optical spectrum region. Then, for GaP experimental reflection spectra it is selected the point \hbar2
2=10.5625·10-4, the intermediate parameters are \hbar2
2=10.5625 ·10-4, \hbar2
n2=9.03130933157· 10-4, \hbar2
2=1.875029665786·10-4, the basic parameters are \hbar2
p2=19.5902684716 \linebreak·10-4, \hbar2
c2=5.28479085993 ·10-4, \hbar2
2=0.79237637701·10-4 (eV)2. The R values calculated by electron parameters coincide with the experimental values R (\hbar
) to within 10-6\div10-10 for 12 symbol computation. By presented method the nanostructure oscillation electron parameters are determined for device producing.