Z. J. JAKUBEK, M. ZACHWIEJA, S. G. NAKHATE AND B. SIMARD, Steacie Institute for Molecular Sciences, National Research Council, 100 Sussex Drive, Ottawa, Ontario K1A 0R6, Canada.
The free SiNSi radical has been investigated in a molecular free jet by laser induced fluorescence excitation and dispersed fluorescence spectroscopy. The radicals have been generated by laser ablation of Si in the presence of NH3 diluted (5%) in He. Excitation spectra of the B2 +u - X2 g system have been recorded in the 32600 - 36400 cm-1 range. For most of the excitation bands, dispersed fluorescence spectra have been obtained. Very large Renner-Teller interaction has been observed in both electronic states. The excitation and dispersed fluorescence spectra have been vibrationally and rotationally analyzed. Rotational, vibrational, and Renner-Teller parameters will be presented.